Ferroelectric Thin Films for Memory Application
نویسندگان
چکیده
منابع مشابه
Simulation of Ferroelectric Thin Films
The hysteresis properties of ferroelectric thin films open an elegant and promising way to build nonvolatile memory cells. Our basic goal is to set up a tool which is able to reproduce the macroscopic behavior of the devices by calculating current, voltage and charge at the contacts correctly. Our tool, MINIMOS-NT, provides a rigorous approach to describe the static hysteresis properties of fer...
متن کاملFerroelectric Thin Films for Tunable Microwave Applications
Modern wireless communication systems are based on microwave technologies. Ferroelectric devices with the electric field dependent dielectric properties and low dielectric losses at microwave frequencies are very promising. Capacitance tunability nc, defined as the ratio of the capacitance at zero applied bias voltage to the capacitance at some desired applied voltage, is the key functional pro...
متن کاملGeneralized continuum theory for ferroelectric thin films
A generalized Ginzburg-Landau-Devonshire free energy has been used to describe the influence of imperfect surface layers or interface layers in ferroelectric thin films. The natural boundary condition has been employed in solving the polarization profile, which can reflect a more realistic situation compared to the previous treatments of the same problem using the so-called extrapolation length...
متن کاملScaling Of Ferroelectric Properties In Thin Films
A fundamental issue in ferroic systems (ferromagnetic and ferroelectric) is the scaling of the order parameter (magnetization or polarization) with size. Specifically, in ferroelectric thin films, deviations in the polarization can occur due to: (i) competition between thermal vibrations and the correlation energy (which aligns the dipoles); (ii) damage during fabrication. These deviations will...
متن کاملCrystallization of Ge:Sb:Te Thin Films for Phase Change Memory Application
Chalcogenide glasses are a chemical compound consisting of at least one chalcogen element, sulphur, selenium, or tellurium, in combination with other elements. These glasses obtained great attention after discovery between 1962 and 1969 by Kolomiets, Eaton, Ovshinsky and Pearson of the S-shape current-voltage characteristic in chalcogenide glasses and the switching phenomenon from high to low r...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Hyomen Kagaku
سال: 2005
ISSN: 0388-5321,1881-4743
DOI: 10.1380/jsssj.26.194